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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage Teilentladungs Aussetzspannung partial discharge extinction voltage tP = 1 ms Tvj=125C Tvj=25C Tvj=-40C TC = 80 C TC = 25 C tP = 1 ms, T C = 80C VCES IC,nom. IC ICRM 6500 6300 5800 600 1200 1200 V A A A
TC=25C, Transistor
Ptot
11,4
kW
VGES
+/- 20V
V
IF
600
A
IFRM
1200
A
VR = 0V, tp = 10ms, T Vj = 125C
I2t
165
k A2s
RMS, f = 50 Hz, t = 1 min.
VISOL
10,2
kV
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)
VISOL
5,1
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 600A, VGE = 15V, Tvj = 25C IC = 600A, VGE = 15V, Tvj = 125C IC = 100mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat
min.
6,4
typ.
4,3 5,3 7,0
max.
4,9 5,9 8,1 V V V
VGE = -15V ... +15V
QG
-
8,4
-
C
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 6300V, VGE = 0V, Tvj = 25C VCE = 6500V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C
Cies
-
84 0,6 60 -
-
nF mA mA nA
ICES
-
-
IGES
-
400
prepared by: Dr. Oliver Schilling approved by: Dr. Schutze 2002-07-05
date of publication: 2002-07-05 revision/Status: Series 1
1
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 600A, VCE = 3600V VGE = 15V, RGon = 4,3, CGE=68nF, Tvj = 25C, VGE = 15V, RGon = 4,3, CGE=68nF, Tvj = 125C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 600A, VCE = 3600V VGE = 15V, RGon = 4,3, CGE=68nF, Tvj = 25C, VGE = 15V, RGon = 4,3, CGE=68nF, Tvj = 125C, Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 600A, VCE = 3600V VGE = 15V, RGoff = 25, CGE=68nF, Tvj = 25C, VGE = 15V, RGoff = 25, CGE=68nF, Tvj = 125C, Fallzeit (induktive Last) fall time (inductive load) IC = 600A, VCE = 3600V VGE = 15V, RGoff = 25, CGE=68nF, Tvj = 25C, VGE = 15V, RGoff = 25, CGE=68nF, Tvj = 125C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip IC = 600A, VCE = 3600V, VGE = 15V RGon = 4,3, CGE=68nF, Tvj = 125C , L = 280nH IC = 600A, VCE = 3600V, VGE = 15V RGoff = 25, CGE=68nF, Tvj = 125C , L = 280nH tP 10sec, VGE 15V, acc to appl.note 2002/05 TVj125C, VCC=4400V, VCEmax=VCES -LCE *di/dt ISC LCE 3000 18 A nH Eoff 3500 mJ Eon 5900 mJ tf 0,40 0,50 s s td,off 5,50 6,00 s s tr 0,37 0,40 s s td,on 0,75 0,72 s s
min.
typ.
max.
RCC+EE
-
0,12
-
m
Diode / Diode
Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 600A, VGE = 0V, Tvj = 25C IF = 600A, VGE = 0V, Tvj = 125C IF = 600A, - diF/dt = 2000A/s VR = 3600V, VGE = -10V, Tvj = 25C VR = 3600V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 600A, - diF/dt = 2000A/s VR = 3600V, VGE = -10V, Tvj = 25C VR = 3600V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 600A, - diF/dt = 2000A/s VR = 3600V, VGE = -10V, Tvj = 25C VR = 3600V, VGE = -10V, Tvj = 125C Erec Qr IRM VF
min.
3,0
typ.
3,8 3,9
max.
4,6 4,7 V V
-
800 1000
-
A A
-
550 1050
-
C C
-
660 1600
-
mJ mJ
2
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Lagertemperatur storage temperature Schaltvorgange IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Transistor / transistor, DC Diode/Diode, DC pro Modul / per Module Paste 1 W/m*K / grease 1 W/m*K RthCK RthJC -
typ.
0,006
max.
0,011 0,021 K/W K/W K/W
Tvj, max
-
-
150
C
Tvj,op
-40
-
125
C
Tstg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight Schraube /screw M6 M AlN
56
mm
26
mm
>600 5 Nm
Anschlusse / terminals M4 Anschlusse / terminals M8
M
2 8 - 10 1400
Nm Nm g
G
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE)
V GE = 15V
1300 1200 1100 1000 900 800
25C 125C
IC [A]
700 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
1300 1200 1100 1000 900 800
20V 15V 12V 10V
IC = f (VCE), VGE= < see inset >
Tvj = 125C
IC [A]
700 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0
VCE [V]
4
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE)
VCE = 10V
1300 1200 1100 1000 900 800
25C 125C
IC [A]
700 600 500 400 300 200 100 0 5 6 7 8 9 10 11 12 13 14 15
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
1300 1200 1100 1000 900 800
25C 125C
IF = f (VF)
IF [A]
700 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0
VF [V]
5
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) RGon=4,3, RGoff=25, CGE = 68nF, VGE=15V, VCE = 3600V, Tvj = 125C,
16000 14000
Eon
12000 10000 8000 6000 4000 2000 0 0 200
Eoff Erec
E [mJ]
400
600
800
1000
1200
IC [A]
Schaltverluste (typisch) Switching losses (typical)
14000 12000 10000 8000 6000 4000 2000 0 4 6 8
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
IC = 600A , VCE = 3600V , VGE=15V, CGE=68nF , Tvj = 125C
Eon Eoff Erec
E [mJ]
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48
RG []
6
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
RG,off = 25, CGE=68nF, VGE=15V, Tvj= , VCC <=4400V
1200 1000 800
Tvj=125C Tvj=25C
IC [A]
600 400 200 0 2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
VCE [V] (at auxiliary terminals)
Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA)
Pmax = 1800kW ;
Tvj= 125C
1200 1000 800
IR [A]
600 400 200 0 0 1000 2000 3000 4000 5000 6000
VR [V] (at auxiliary terminals)
7
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Transienter Warmewiderstand Transient thermal impedance
0,1
ZthJC = f (t)
ZthJC [K / W]
0,01
0,001 Zth:Diode Zth:IGBT
0,0001 0,001
0,01
0,1
1
10
100
t [s]
i ri [K/kW] i [s] ri [K/kW] i [s]
: IGBT : IGBT : Diode : Diode
1 4,95 0,030 9,45 0,030
2 2,75 0,10 5,25 0,10
3 0,66 0,30 1,26 0,30
4 2,64 1,0 5,04 1,0
8
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Auere Abmessungen / extenal dimensions
Anschlusse / Terminals
1 2 3 4,6,8, 5,7,9
Hilfsemitter / auxiliary emitter Gate / gate Hilfskollektor / auxiliary collector Emitter / emitter Kollektor / collector
9
FZ 600 R65 KF1 (final1).xls
Terms & Conditions of Usage
Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact".

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